JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW66 TRANSISTO R (NPN)FEATURESComplementary to BCW68BCW66 is subdivided into three groups F,G and H according to DC current gain MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 75 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.8 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃T stgStorage Temperature-55 ~ +150ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)℃℃C,May,2013www.nscn.com.cn【南京南山半导体有限公司 — 长电贴片三极管选型资料】
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