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RZF030P01TL;中文规格书,Datasheet资料

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1.5VDrivePchMOSFET
RZF030P01

zStructure
SiliconP-channelMOSFET
zFeatures
1Lowon-resistance.2Highpowerpackage.3Lowvoltagedrive.(1.5V
zApplicationsSwitching

zPackagingspecifications
Package
TypeRZF030P01
Code
Basicorderingunit(pieces
TapingTL3000

zDimensions(Unit:mm
TUMT3
(1Gate(2Source(3Drain
Abbreviatedsymbol:YD
0.2Max.


zEquivalentcircuit
(3


zAbsolutemaximumratings(Ta=25°C
Parameter
Drain-sourcevoltageGate-sourcevoltageDraincurrentSourcecurrent(Bodydiode
ContinuousPulsed
ContinuousPulsed

(1
∗1
∗2
(2
∗1ESDPROTECTIONDIODE∗2BODYDIODE
(1Gate(2Source(3Drain
TotalpowerdissipationChanneltemperature
RangeofStoragetemperature
∗1Pw≤10µs,Dutycycle≤1%∗2Mountedonaceramicboard
SymbolVDSSVGSSID
IDP∗1IS∗1ISP
PD∗2TchTstgLimits−12±10±3±12−0.65−120.8150−55to+150UnitVVAAAAW°C°C

zThermalresistance
Parameter
Channeltoambient
∗Mountedonaceramicboard.

SymbolRth(ch-a
∗
Limits156
Unit°C/W


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1/52009.01-Rev.A


RZF030P01

zElectricalcharacteristics(Ta=25°C
Parameter
Symbol
IGSSGate-sourceleakage
Drain-sourcebreakdownvoltageV(BRDSSZerogatevoltagedraincurrentIDSSGatethresholdvoltageVGS(thStaticdrain-sourceon-stateresistance
ForwardtransferadmittanceInputcapacitanceOutputcapacitance
ReversetransfercapacitanceTurn-ondelaytimeRisetime
Turn-offdelaytimeFalltime
TotalgatechargeGate-sourcechargeGate-draincharge
∗Pulsed
∗
DataSheet
RDS(on
Yfs∗CissCossCrsstd(on∗tr∗td(off∗tf∗Qg∗Qgs∗Qgd∗
Min.−−12−−0.3−−−−5−−−−−−−−−−
Typ.−−−−28395172−1860210200940210120183.02.5
Max.±10−−1−1.0395476144−−−−−−−−−−−UnitµAVµAVmΩmΩmΩmΩSpFpFpFnsnsnsnsnCnCnC
Conditions
VGS=±10V,VDS=0VID=−1mA,VGS=0VVDS=−12V,VGS=0VVDS=−6V,ID=−1mAID=−3A,VGS=−4.5VID=−1.5A,VGS=−2.5VID=−1.5A,VGS=−1.8VID=−0.6A,VGS=−1.5VVDS=−6V,ID=−3AVDS=−6VVGS=0Vf=1MHzID=−1.5AVDD−6VVGS=−4.5VRL4ΩRG=10ΩVDD−6VRL2ΩID=−3ARG=10ΩVGS=−4.5V

zBodydiodecharacteristics(Source-drain(Ta=25°C
Parameter
Forwardvoltage
∗Pulsed

SymbolVSD
∗
Min.−
Typ.−
Max.−1.2
UnitV
Conditions
IS=−3A,VGS=0V


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2/52009.01-Rev.A


RZF030P01

zElectricalcharacteristiccurves
10DRAINCURRENT:-ID[A]
DRAINCURRENT:-ID[A]
VGS=-10VVGS=-4.5VVGS=-1.8V
5
VGS=-1.4VVGS=-1.2VVGS=-1.0V
00.0
2.0
4.0
6.0
8.0
10.0
00.0
0.2
0.4
0.6
0.8
Ta=25℃pulsed
VGS=-1.6V
10
VGS=-10VDRAINCURRENT:-ID[A]
VGS=-4.5V
VGS=-2.4V
Ta=25℃pulsedVGS=-1.8V
VGS=-1.6V
5
VGS=-1.4VVGS=-1.2VVGS=-1.0V
1.0
10
VDS=-6Vpulsed
DataSheet
1
Ta=125℃Ta=75℃0.1Ta=25℃
Ta=-25℃0.01
0.001
0.0
0.51.01.5
DRAIN-SOURCEVOLTAGE:-VDS[V]Fig.1TypicalOutputCharacteristics(Ι
DRAIN-SOURCEVOLTAGE:-VDS[V]Fig.2TypicalOutputCharacteristics(Ⅱ
GATE-SOURCEVOLTAGE:-VGS[V]Fig.3TypicalTransferCharacteristics
1000
STATICDRAIN-SOURCEON-STATERESISTANCE:RDS(on[mΩ]
STATICDRAIN-SOURCEON-STATERESISTANCE:RDS(on[mΩ]
Ta=25℃pulsed
VGS=-1.5VVGS=-1.8VVGS=-2.5VVGS=-4.5V
250200150100500
ID=-1.5AID=-3.0A
STATICDRAIN-SOURCEON-STATERESISTANCE:RDS(on[mΩ]
Ta=25℃pulsed
1000
VGS=-4.5Vpulsed
Ta=125℃Ta=75℃Ta=25℃Ta=-25℃
100100
100.01
0.11
DRAINCURRENT:-ID[A]
10
0246810
100.01
GATE-SOURCECURRENT:-VGS[V]
0.11
DRAINCURRENT:-ID[A]
10
Fig.4StaticDrain-SourceOn-StateResistancevs.DrainCurrent
　
Fig.5StaticDrain-SourceOn-State
Resistancevs.Gate-SourceVoltageFig.6StaticDrain-SourceOn-StateResistancevs.DrainCurrent
1000
STATICDRAIN-SOURCEON-STATERESISTANCE:RDS(on[mΩ]
STATICDRAIN-SOURCEON-STATERESISTANCE:RDS(on[mΩ]
100
Ta=125℃Ta=75℃Ta=25℃Ta=-25℃
STATICDRAIN-SOURCEON-STATERESISTANCE:RDS(on[mΩ]
VGS=-2.5Vpulsed
1000
VGS=-1.8Vpulsed
Ta=125℃Ta=75℃Ta=25℃Ta=-25℃
1000
VGS=-1.5Vpulsed
Ta=125℃Ta=75℃Ta=25℃Ta=-25℃
100
100
100.01
0.1110
100.01
0.1110
100.01
0.1110
DRAINCURRENT:-ID[A]
Fig.7StaticDrain-SourceOn-StateResistancevs.DrainCurrent
DRAINCURRENT:-ID[A]Fig.8StaticDrain-SourceOn-StateResistancevs.DrainCurrent
DRAINCURRENT:-ID[A]
Fig.9StaticDrain-SourceOn-StateResistancevs.DrainCurrent
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3/52009.01-Rev.A


RZF030P01

10SOURCECURRENT:-Is[A]
100
VGS=0Vpulsed
FORWARDTRANSFERADMITTANCE:Yfs[S]
10
VDS=-6Vpulsed
CAPASITANCE:C[pF]
10000
Ciss
1000
DataSheet
1
Coss
0.1
Ta=125℃Ta=75℃Ta=25℃Ta=-25℃
1
Ta=125℃Ta=75℃Ta=25℃Ta=-25℃
100
Ta=25℃f=1MHzVGS=0V0.01
0.1
Crss
0.01
0.0
0.51.01.5
0.10.01
10
0.1
1
10
110100
SOURCEDRAINVOLTAGE:-VSD[V]
Fig.10SourceCurrentvs.Source-DrainVoltage
DRAINCURRENT:-ID[A]Fig.11ForwardTransferAdmittancevs.DrainCurrent
DRAIN-SOURCEVOLTAGE:-VDS[V]
Fig.12TypicalCapacitancevs.Drain-SourceVoltage
GATE-SOURCEVOLTAGE:-VGS[V]
10000SWITCHINGTIME:t[ns]
1000
tf
td(off
Ta=25℃VDD=-6VVGS=-4.5VRG=10ΩPulsed
4
3
Ta=25℃VDD=-6VID=-3ARG=10ΩPulsed
100
td(on
10
tr
10.01
0.1
1
10
DRAINCURRENT:-ID[A]Fig.13SwitchingCharacteristics
2
1
00
5
10
15
20
TOTALGATECHARGE:Qg[nC]Fig.14DynamicInputCharacteristics
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c2009ROHMCo.,Ltd.Allrightsreserved.○
4/52009.01-Rev.A


RZF030P01

zMeasurementcircuits
VGS
PulseWidth
DataSheet
ID
RL
D.U.T.
VDS
VGS
10%50%
10%
90%
50%
10%90%
RGVDD
VDS
90%
td(on
ton
tr
td(off
toff
tf
Fig.1-1SwitchingTimeMeasurementCircuit
Fig.1-2SwitchingWaveforms


VG
ID
VGS
RL
IG(Const.
RG
D.U.T.
VDD
VDS
VGS
Qgs
Qg
Qgd
Charge
Fig.2-1GateChargeMeasurementCircuitFig.2-2GateChargeWaveforms

zNotice
Thisproductmightcausechipagingandbreakdownunderthelargeelectrifiedenvironment.PleaseconsidertodesignESDprotectioncircuit.
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5/52009.01-Rev.A

Appendix
Notes
Nocopyingorreproductionofthisdocument,inpartorinwhole,ispermittedwithouttheconsentofROHMCO.,LTD.
Thecontentspecifiedhereinissubjecttochangeforimprovementwithoutnotice.
ThecontentspecifiedhereinisforthepurposeofintroducingROHM'sproducts(hereinafter"Products".IfyouwishtouseanysuchProduct,pleasebesuretorefertothespecifications,whichcanbeobtainedfromROHMuponrequest.
Examplesofapplicationcircuits,circuitconstantsandanyotherinformationcontainedhereinillustratethestandardusageandoperationsoftheProducts.Theperipheralconditionsmustbetakenintoaccountwhendesigningcircuitsformassproduction.
Greatcarewastakeninensuringtheaccuracyoftheinformationspecifiedinthisdocument.However,shouldyouincuranydamagearisingfromanyinaccuracyormisprintofsuchinformation,ROHMshallbearnore-sponsibilityforsuchdamage.
ThetechnicalinformationspecifiedhereinisintendedonlytoshowthetypicalfunctionsofandexamplesofapplicationcircuitsfortheProducts.ROHMdoesnotgrantyou,explicitlyorimplicitly,anylicensetouseorexerciseintellectualpropertyorotherrightsheldbyROHMandotherparties.ROHMshallbearnore-sponsibilitywhatsoeverforanydisputearisingfromtheuseofsuchtechnicalinformation.
TheProductsspecifiedinthisdocumentareintendedtobeusedwithgeneral-useelectronicequipmentordevices(suchasaudiovisualequipment,office-automationequipment,communicationdevices,elec-tronicappliancesandamusementdevices.
TheProductsarenotdesignedtoberadiationtolerant.
WhileROHMalwaysmakeseffortstoenhancethequalityandreliabilityofitsProducts,aProductmayfailormalfunctionforavarietyofreasons.
PleasebesuretoimplementinyourequipmentusingtheProductssafetymeasurestoguardagainstthepossibilityofphysicalinjury,fireoranyotherdamagecausedintheeventofthefailureofanyProduct,suchasderating,redundancy,firecontrolandfail-safedesigns.ROHMshallbearnoresponsibilitywhatsoeverforyouruseofanyProductoutsideoftheprescribedscopeornotinaccordancewiththeinstructionmanual.
TheProductsarenotdesignedormanufacturedtobeusedwithanyequipment,deviceorsystemwhichrequiresanextremelyhighlevelofreliabilitythefailureormalfunctionofwhichmayresultinadirectthreattohumanlifeorcreateariskofhumaninjury(suchasamedicalinstrument,transportationequipment,aerospacemachinery,nuclear-reactorcontroller,fuel-controllerorothersafetydevice.ROHMshallbearnoresponsibilityinanywayforuseofanyoftheProductsfortheabovespecialpurposes.IfaProductisintend-edtobeusedforanysuchspecialpurpose,pleasecontactaROHMsalesrepresentativebeforepurchasing.IfyouintendtoexportorshipoverseasanyProductortechnologyspecifiedhereinthatmaybecontrolledundertheForeignExchangeandtheForeignTradeLaw,youwillberequiredtoobtainalicenseorpermitundertheLaw.
ThankyouforyouraccessingtoROHMproductinformations.
Moredetailproductinformationsandcatalogsareavailable,pleasecontactyournearestsalesoffice.
ROHMCustomerSupportSystem
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Copyright©2009ROHMCo.,Ltd.
THEAMERICAS/EUROPE/ASIA/JAPAN
Contactus:webmaster@rohm.co.jp
21SaiinMizosaki-cho,Ukyo-ku,Kyoto615-8585,Japan
TEL:+81-75-311-2121FAX:+81-75-315-0172
Appendix-Rev4.0
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RZF030P01TL

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