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CAT28LV65WA-25T中文资料

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CAT28LV65
64K-BitCMOSPARALLELEEPROMFEATURES
s3.0Vto3.6VsupplysReadaccesstimes:
sCMOSandTTLcompatibleI/OsAutomaticpagewriteoperation:
H
GENFROLA
EE
LE
ADFREETM
–150/200/250ns
sLowpowerCMOSdissipation:
–1to32bytesin5ms
–Pageloadtimer
sEndofwritedetection:
–Active:8mAmax.–Standby:100µAmax.
sSimplewriteoperation:
–On-chipaddressanddatalatches–Self-timedwritecyclewithauto-clear
sFastwritecycletime:
–Togglebit–DATApolling–RDY/BUSY
sHardwareandsoftwarewriteprotections100,000program/erasecycless100yeardataretention
–5msmax.
sCommercial,industrialandautomotive
temperatureranges
DESCRIPTION
TheCAT28LV65isalowvoltage,lowpower,CMOSparallelEEPROMorganizedas8Kx8-bits.Itrequiresasimpleinterfaceforin-systemprogramming.On-chipaddressanddatalatches,self-timedwritecyclewithauto-clearandVCCpowerup/downwriteprotectioneliminateadditionaltimingandprotectionhardware.DATAPolling,RDY/BUSYandTogglestatusbitsignalthestartandendoftheself-timedwritecycle.Additionally,theCAT28LV65featureshardwareandsoftwarewriteprotection.
TheCAT28LV65ismanufacturedusingCatalyst’sadvancedCMOSfloatinggatetechnology.Itisdesignedtoendure100,000program/erasecyclesandhasadataretentionof100years.ThedeviceisavailableinJEDECapproved28-pinDIP,28-pinTSOP,28-pinSOICor32-pinPLCCpackages.
BLOCKDIAGRAM
A5–A12
ADDR.BUFFER&LATCHESINADVERTENT
WRITEPROTECTION
ROWDECODER
8,192x8E2PROMARRAY
32BYTEPAGEREGISTER
VCC
HIGHVOLTAGEGENERATOR
CEOEWE
CONTROLLOGIC
I/OBUFFERS
TIMERADDR.BUFFER&LATCHES
DATAPOLLING,RDY/BUSY&TOGGLEBIT
COLUMNDECODER
I/O0–I/O7
A0–A4RDY/BUSY
©2005byCatalystSemiconductor,Inc.
Characteristicssubjecttochangewithoutnotice
1
Doc.No.1024,Rev.D

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CAT28LV65
PINCONFIGURATION
DIPPackage(P,L
RDY/BUSY
A12A7A6
A5A4A3A2A1A0I/O0I/O1I/O2VSS
1234567891011121314
2827262524232221201918171615
VCCWENCA8A9A11OEA10CEI/O7I/O6I/O5I/O4I/O3
SOICPackage(J,W(K,X
RDY/BUSY
A12A7A6A5A4A3A2A1A0I/O0I/O1I/O2VSS
1234567891011121314
2827262524232221201918171615
VCCWENCA8A9A11OEA10CEI/O7I/O6I/O5I/O4I/O3
PLCCPackage(N,G
A7A12RDY/BUSYNCVCC
TSOPTopView(8mmx13.4mm(T13,H13
OEA11A9A8NCWEVcc
RDY/BUSY
A12A7A6A5A4A3
1234567891011121314
2827262524232221201918171615
A10CEI/07I/06I/05I/04I/03GNDI/O2I/O1I/O0A0A1A2
4321323130
A6A5A4A3A2A1A0NCI/O0
56
2928
A8A9A11NCOEA10CEI/O7I/O6
727826925TOPVIEW102411231222132114151617181920I/O1I/O2VSSNC
I/O3I/O4I/O5
PINFUNCTIONS
PinNameA0–A12I/O0–I/O7CEOERDY/BSY
FunctionAddressInputsDataInputs/OutputsChipEnableOutputEnableReady/BusyStatus
PinNameWEVCCVSSNC
FunctionWriteEnable3.0to3.6VSupplyGroundNoConnect
Doc.No.1024,Rev.D
WENC
2

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CAT28LV65
ABSOLUTEMAXIMUMRATINGS*
TemperatureUnderBias.................–55°Cto+125°CStorageTemperature.......................–65°Cto+150°CVoltageonAnyPinwith
RespecttoGround(2...........–2.0Vto+VCC+2.0VVCCwithRespecttoGround...............–2.0Vto+7.0VPackagePowerDissipation
Capability(Ta=25°C...................................1.0WLeadSolderingTemperature(10secs............300°COutputShortCircuitCurrent(3........................100mARELIABILITYCHARACTERISTICSSymbolNEND(1TDR(1VZAP(1ILTH(1(4
ParameterEnduranceDataRetentionESDSusceptibilityLatch-Up
Min.1051002000100
Max.
*COMMENT
Stressesabovethoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsoutsideofthoselistedintheoperationalsectionsofthisspecifica-tionisnotimplied.Exposuretoanyabsolutemaximumratingforextendedperiodsmayaffectdeviceperfor-manceandreliability.
UnitsCycles/ByteYearsVoltsmA
TestMethod
MIL-STD-883,TestMethod1033MIL-STD-883,TestMethod1008MIL-STD-883,TestMethod3015JEDECStandard17
MODESELECTION
Mode
Read
ByteWrite(WEControlledByteWrite(CEControlledStandby,andWriteInhibitReadandWriteInhibit
HXCELL
LXHWEH
OELHHXH
I/ODOUTDINDINHigh-ZHigh-Z
PowerACTIVEACTIVEACTIVESTANDBYACTIVE
CAPACITANCETA=25°C,f=1.0MHz
SymbolCI/O(1CIN(1
Test
Input/OutputCapacitanceInputCapacitance
Max.106
UnitspFpF
ConditionsVI/O=0VVIN=0V
Note:
(1Thisparameteristestedinitiallyandafteradesignorprocesschangethataffectstheparameter.
(2TheminimumDCinputvoltageis–0.5V.Duringtransitions,inputsmayundershootto–2.0Vforperiodsoflessthan20ns.MaximumDC
voltageonoutputpinsisVCC+0.5V,whichmayovershoottoVCC+2.0Vforperiodsoflessthan20ns.(3Outputshortedfornomorethanonesecond.Nomorethanoneoutputshortedatatime.
(4Latch-upprotectionisprovidedforstressesupto100mAonaddressanddatapinsfrom–1VtoVCC+1V.
3
Doc.No.1024,Rev.D

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CAT28LV65
D.C.OPERATINGCHARACTERISTICSVcc=3.0Vto3.6V,unlessotherwisespecified.
Limits
SymbolICCISBC(3ILIILOVIH(3VILVOHVOLVWI
Parameter
VCCCurrent(Operating,TTLVCCCurrent(Standby,CMOSInputLeakageCurrentOutputLeakageCurrentHighLevelInputVoltageLowLevelInputVoltageHighLevelOutputVoltageLowLevelOutputVoltageWriteInhibitVoltage
2–1–52–0.32
0.3
Min.
Typ.
Max.810015VCC+0.30.6
UnitsmAµAµAµAVVVVV
IOH=–100µAIOL=1.0mA
TestConditionsCE=OE=VIL,
f=1/tRCmin,AllI/O’sOpenCE=VIHC,AllI/O’sOpenVIN=GNDtoVCCVOUT=GNDtoVCC,CE=VIH
A.C.CHARACTERISTICS,ReadCycleVcc=3.0Vto3.6V,unlessotherwisespecified.
28LV65-15
SymboltRCtCEtAAtOEtLZ(1tOLZ(1tHZ(1(2tOHZ(1(2tOH(1
ParameterReadCycleTimeCEAccessTimeAddressAccessTimeOEAccessTimeCELowtoActiveOutputOELowtoActiveOutputCEHightoHigh-ZOutputOEHightoHigh-ZOutputOutputHoldfromAddressChange
000
5050
0
Min.150
15015070
00
0
5050
0
5555
Max.
28LV65-20Min.200
20020080
0
Max.
28LV65-25Min.250
250250100Max.
Unitsnsnsnsnsnsnsnsnsns
Note:
(1Thisparameteristestedinitiallyandafteradesignorprocesschangethataffectstheparameter.
(2Outputfloating(High-Zisdefinedasthestatewhentheexternaldatalineisnolongerdrivenbytheoutputbuffer.(3VIHC=VCC–0.3VtoVCC+0.3V.
Doc.No.1024,Rev.D
4

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CAT28LV65
Figure1.A.C.TestingInput/OutputWaveform(4
V-0.3VCC
INPUTPULSELEVELS
0.0V
0.6V2.0V
REFERENCEPOINTS
Figure2.A.C.TestingLoadCircuit(example
Vcc
1.8K
DEVICE
UNDERTEST
OUTPUT
1.3K
CL=100pF
CLINCLUDESJIGCAPACITANCE
A.C.CHARACTERISTICS,WriteCycleVcc=3.0Vto3.6V,unlessotherwisespecified.
28LV65-15
SymboltWCtAStAHtCStCHtCW(2tOEStOEHtWP(2tDStDHtINIT(1tBLC(1(3
tRB
ParameterWriteCycleTimeAddressSetupTime0AddressHoldTimeCESetupTimeCEHoldTimeCEPulseTimeOESetupTimeOEHoldTimeWEPulseWidthDataSetupTimeDataHoldTimeWriteInhibitPeriodAfterPower-upByteLoadCycleTimeWELowtoRDY/BusyLow
0100001100011060050.05
10100220
Min
Max5
0100001501010150100050.1
10100220
28LV65-20Min
Max5
0100001501010150100050.1
10100220
28LV65-25Min
Max5
Unitsmsnsnsnsnsnsnsnsnsnsnsmsµsns
Note:
(1Thisparameteristestedinitiallyandafteradesignorprocesschangethataffectstheparameter.(2Awritepulseoflessthan20nsdurationwillnotinitiateawritecycle.
(3AtimerofdurationtBLCmax.beginswitheveryLOWtoHIGHtransitionofWE.Ifallowedtotimeout,apageorbytewritewillbegin;
howeveratransitionfromHIGHtoLOWwithintBLCmax.stopsthetimer.(4Inputriseandfalltimes(10%and90%<10ns.
5
Doc.No.1024,Rev.D

元器件交易网www.cecb2b.com
CAT28LV65
DEVICEOPERATION
Read
DatastoredintheCAT28LV65istransferredtothedatabuswhenWEisheldhigh,andbothOEandCEareheldlow.ThedatabusissettoahighimpedancestatewheneitherCEorOEgoeshigh.This2-linecontrolarchitec-turecanbeusedtoeliminatebuscontentioninasystemenvironment.
ByteWrite
AwritecycleisexecutedwhenbothCEandWEarelow,andOEishigh.WritecyclescanbeinitiatedusingeitherWEorCE,withtheaddressinputbeinglatchedonthefallingedgeofWEorCE,whicheveroccurslast.Data,conversely,islatchedontherisingedgeofWEorCE,whicheveroccursfirst.Onceinitiated,abytewritecycleautomaticallyerasestheaddressedbyteandthenewdataiswrittenwithin5ms.
Figure3.ReadCycle
ADDRESS
tRC
tCE
CE
tOE
OE
VIH
WE
tLZ
tOLZ
DATAOUT
HIGH-Z
tOHDATAVALID
tAA
tOHZtHZ
DATAVALID
Figure4.ByteWriteCycle[WEControlled]
ADDRESS
tAS
tCS
CE
tAH
tCH
tWC
OE
tOES
WE
tRB
RDY/BUSY
HIGH-Z
tBLC
HIGH-Z
tWP
tOEH
DATAOUT
HIGH-Z
DATAIN
DATAVALIDtDS
tDH
Doc.No.1024,Rev.D
6

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CAT28LV65
PageWrite
ThepagewritemodeoftheCAT28LV65(essentiallyanextendedBYTEWRITEmodeallowsfrom1to32bytesofdatatobeprogrammedwithinasingleEEPROMwritecycle.Thiseffectivelyreducesthebyte-writetimebyafactorof32.
FollowinganinitialWRITEoperation(WEpulsedlow,fortWP,andthenhighthepagewritemodecanbeginbyissuingsequentialWEpulses,whichloadtheaddressanddatabytesintoa32bytetemporarybuffer.Thepageaddresswheredataistobewritten,specifiedbybitsA5toA12,islatchedonthelastfallingedgeofWE.EachbytewithinthepageisdefinedbyaddressbitsA0toA4Figure5.ByteWriteCycle[CEControlled]
ADDRESS
tAS
CE
tOEH
OE
tCS
WE
tRB
RDY/BUSY
HIGH-Z
HIGH-Z
tOES
tCH
tAH
tCW
tBLC
(whichcanbeloadedinanyorderduringthefirstandsubsequentwritecycles.EachsuccessivebyteloadcyclemustbeginwithintBLCMAXoftherisingedgeoftheprecedingWEpulse.ThereisnopagewritewindowlimitationaslongasWEispulsedlowwithintBLCMAX.Uponcompletionofthepagewritesequence,WEmuststayhighaminimumoftBLCMAXfortheinternalauto-maticprogramcycletocommence.Thisprogrammingcycleconsistsofanerasecycle,whicherasesanydatathatexistedineachaddressedcell,andawritecycle,whichwritesnewdatabackintothecell.Apagewritewillonlywritedatatothelocationsthatwereaddressedandwillnotrewritetheentirepage.
tWC
DATAOUT
HIGH-Z
DATAINDATAVALIDtDS
tDH
Figure6.PageModeWriteCycle
OE
CE
tWP
WE
tBLC
ADDRESS
tWC
I/O
BYTE0
BYTE1
BYTE2
BYTEn
BYTEn+1
LASTBYTEBYTEn+2
Doc.No.1024,Rev.D
7

元器件交易网www.cecb2b.com
CAT28LV65
DATAPolling
DATApollingisprovidedtoindicatethecompletionofwritecycle.Onceabytewriteorpagewritecycleisinitiated,attemptingtoreadthelastbytewrittenwilloutputthecomplementofthatdataonI/O7(I/O0–I/O6areindeterminateuntiltheprogrammingcycleiscom-plete.Uponcompletionoftheself-timedwritecycle,allI/O’swilloutputtruedataduringareadcycle.ToggleBit
InadditiontotheDATAPollingfeature,thedeviceoffersanadditionalmethodfordeterminingthecompletionofawritecycle.Whileawritecycleisinprogress,reading
datafromthedevicewillresultinI/O6togglingbetweenoneandzero.However,oncethewriteiscomplete,I/O6stopstogglingandvaliddatacanbereadfromthedevice.
Ready/BUSY(RDY/BUSY
TheRDY/BUSYpinisanopendrainoutputwhichindicatesdevicestatusduringprogramming.Itispulledlowduringthewritecycleandreleasedattheendofprogramming.SeveraldevicesmaybeOR-tiedtothesameRDY/BUSYline.
Figure7.DATAPolling
ADDRESS
CE
WE
tOEH
OE
tWC
I/O7
DIN=X
DOUT=X
DOUT=X
28LV65F11
tOE
tOES
Figure8.ToggleBit
WE
CE
tOEH
OE
tOE
tOES
I/O6
(1
tWC
(1
Note:
(1BeginningandendingstateofI/O6isindeterminate.
Doc.No.1024,Rev.D
8

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CAT28LV65
HARDWAREDATAPROTECTION
Thefollowingisalistofhardwaredataprotectionfea-turesthatareincorporatedintotheCAT28LV65.(1VCCsenseprovidesforwriteprotectionwhenVCC
fallsbelow2.0Vmin.(2Apowerondelaymechanism,tINIT(seeACcharac-teristics,providesa5to10msdelaybeforeawritesequence,afterVCChasreached2.40Vmin.(3WriteinhibitisactivatedbyholdinganyoneofOE
low,CEhighorWEhigh.
(4Noisepulsesoflessthan20nsontheWEorCE
inputswillnotresultinawritecycle.SOFTWAREDATAPROTECTION
TheCAT28LV65featuresasoftwarecontrolleddataprotectionschemewhich,onceenabled,requiresadataalgorithmtobeissuedtothedevicebeforeawritecanbeperformed.ThedeviceisshippedfromCatalystwiththesoftwareprotectionNOTENABLED(theCAT28LV65isinthestandardoperatingmode.
Figure9.WriteSequenceforActivatingSoftware
DataProtection
WRITEDATA:ADDRESS:
AA1555
Figure10.WriteSequenceforDeactivating
SoftwareDataProtection
WRITEDATA:ADDRESS:
AA1555
WRITEDATA:ADDRESS:
550AAA
WRITEDATA:ADDRESS:
550AAA
WRITEDATA:ADDRESS:
A01555
WRITEDATA:ADDRESS:
801555
(1SOFTWAREDATA(12
PROTECTIONACTIVATED
WRITEDATA:ADDRESS:
AA1555
WRITEDATA:XX
WRITEDATA:ADDRESS:
550AAA
TOANYADDRESS
WRITELASTBYTE
TO
LASTADDRESS
WRITEDATA:ADDRESS:
201555
Note:
(1Writeprotectionisactivatedatthispointwhetherornotanymorewritesarecompleted.WritingtoaddressesmustoccurwithintBLC
Max.,afterSDPactivation.
9
Doc.No.1024,Rev.D

元器件交易网www.cecb2b.com
CAT28LV65
Toactivatethesoftwaredataprotection,thedevicemustbesentthreewritecommandstospecificaddresseswithspecificdata(Figure9.Thissequenceofcommands(alongwithsubsequentwritesmustadheretothepagewritetimingspecifications(Figure11.Oncethisisdone,allsubsequentbyteorpagewritestothedevicemustbeprecededbythissamesetofwritecommands.Thedataprotectionmechanismisactivateduntiladeactivatesequenceisissuedregardlessofpoweron/offtransi-tions.Thisgivestheuseraddedinadvertentwritepro-tectiononpower-upinadditiontothehardwareprotec-tionprovided.
Figure11.SoftwareDataProtectionTiming
DATA
ADDRESSCE
tWP
WE
tBLC
AA1555
550AAA
A01555
BYTEORPAGEWRITESENABLED
tWC
ToallowtheusertheabilitytoprogramthedevicewithanEEPROMprogrammer(orfortestingpurposesthereisasoftwarecommandsequencefordeactivatingthedataprotection.Thesixstepalgorithm(Figure10willresettheinternalprotectioncircuitry,andthedevicewillreturntostandardoperatingmode(Figure12providesresettiming.Afterthesixthbyteofthisresetsequencehasbeenissued,standardbyteorpagewritingcancommence.
Figure12.ResettingSoftwareDataProtectionTiming
DATA
ADDRESSCE
DEVICE
UNPROTECTED
WE
AA1555
550AAA
801555
AA1555
550AAA
201555
tWC
SDPRESET
Doc.No.1024,Rev.D
10

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CAT28LV65
ORDERINGINFORMATION
PrefixCAT
Device#28LV65
SuffixN
I
-25
T
OptionalCompany
ID
ProductNumber
TemperatureRange
Blank=Commercial(0˚Cto+70˚CI=Industrial(-40˚Cto+85˚CA=Automotive(-40˚to+105˚C*
Speed15:150ns20:200ns25:250ns
Tape&Reel
PackageP:PDIP
J:SOIC(JEDECK:SOIC(EIAJN:PLCC
T13:TSOP(8mmx13.4mm
L:PDIP(Leadfree,Halogenfree
W:SOIC(JEDEC(Leadfree,HalogenfreeX:SOIC(EIAJ(Leadfree,HalogenfreeG:PLCC(Leadfree,Halogenfree
H13:TSOP(8mmx13.4mm(Leadfree,Halogenfree
*-40˚Cto+125˚Cisavailableuponrequest
Notes:
(1ThedeviceusedintheaboveexampleisaCAT28LV65NI-25T(PLCC,Industrialtemperature,250nsAccessTime,Tape&Reel.
11
Doc.No.1024,Rev.D

元器件交易网www.cecb2b.com
REVISIONHISTORY
Date03/29/0404/20/04
RevisionComments
BC
AddedGreenpackagesinallareasDeletedatasheetdesignationUpdateOrderingInformationUpdateRevisionHistoryUpdateRevNumber
03/29/05
D
UpdateA.CCharacteristics,WriteCycle
Copyrights,TrademarksandPatents
TrademarksandregisteredtrademarksofCatalystSemiconductorincludeeachofthefollowing:DPP™
AE2™
CatalystSemiconductorhasbeenissuedU.S.andforeignpatentsandhaspatentapplicationspendingthatprotectitsproducts.ForacompletelistofpatentsissuedtoCatalystSemiconductorcontacttheCompany’scorporateofficeat408.542.1000.
CATALYSTSEMICONDUCTORMAKESNOWARRANTY,REPRESENTATIONORGUARANTEE,EXPRESSORIMPLIED,REGARDINGTHESUITABILITYOFITSPRODUCTSFORANYPARTICULARPURPOSE,NORTHATTHEUSEOFITSPRODUCTSWILLNOTINFRINGEITSINTELLECTUALPROPERTYRIGHTSORTHERIGHTSOFTHIRDPARTIESWITHRESPECTTOANYPARTICULARUSEORAPPLICATIONANDSPECIFICALLYDISCLAIMSANYANDALLLIABILITYARISINGOUTOFANYSUCHUSEORAPPLICATION,INCLUDINGBUTNOTLIMITEDTO,CONSEQUENTIALORINCIDENTALDAMAGES.
CatalystSemiconductorproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody,orotherapplicationsintendedtosupportorsustainlife,orforanyotherapplicationinwhichthefailureoftheCatalystSemiconductorproductcouldcreateasituationwherepersonalinjuryordeathmayoccur.
CatalystSemiconductorreservestherighttomakechangestoordiscontinueanyproductorservicedescribedhereinwithoutnotice.Productswithdatasheetslabeled"AdvanceInformation"or"Preliminary"andotherproductsdescribedhereinmaynotbeinproductionorofferedforsale.
CatalystSemiconductoradvisescustomerstoobtainthecurrentversionoftherelevantproductinformationbeforeplacingorders.Circuitdiagramsillustratetypicalsemiconductorapplicationsandmaynotbecomplete.
CatalystSemiconductor,Inc.CorporateHeadquarters1250BorregasAvenueSunnyvale,CA94089Phone:408.542.1000Fax:408.542.1200
www.catalyst-semiconductor.com
Publication#:Revison:Issuedate:1024D
03/29/05

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