SPTECH 2SC33201SPTECH Silicon NPN Power Transistor2SC3320DESCRIPTION·High Collector-Emitter Breakdown Voltage-:V (BR)CEO =400V(Min)·High Switching Speed ·High ReliabilityAPPLICATIONS·Switching regulators ·Ultrasonic generators ·High frequency inverters·General purpose power amplifiers ABSOLUTE MAXIMUMRATINGS(Ta =25℃)THERMAL CHARACTERISTICSSYMBOL PARAMETERMAX UNIT R th j-cThermal Resistance,Junction to Case1.56℃/WSYMBOL PARAMETERVALUE UNIT V CBO Collector-Base Voltage 500V V CEO Collector-Emitter Voltage 400V V CEO(SUS)Collector-Emitter Voltage 400V V EBO Emitter-Base Voltage 7V I C Collector Current-Continuous 15A I B Base Current-Continuous 5A P C Collector Power Dissipation @T C =25℃80W T J Junction Temperature 150℃T stgStorage Temperature Range-65~150℃
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